Thursday 6th April 2023 at 3:30pm, Julien Frougier (IBM, USA) will give a seminar on Gate-All-Around NanoSheet CMOS Technology (online).
Abstract :
Since the demonstration of the first working transistor by Bardeen, Brattain and Shockley in 1947, a relentless quest for Power-Performance-Area-Cost optimization has been driving tremendous innovation across multi-disciplinary fields. In this talk, we will first discuss a brief history of the Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) and its operating principles. We will then review the fundamental scaling challenges of Complementary-Metal-Oxide-Semiconductor (CMOS) technology as well as the evolution of the cutting-edge MOSFET architectures. Finally, we will focus on the horizontally stacked Gate-All-Around (GAA) Nanosheet transistor. We will show how it can answer logic device needs for future technologies by providing the best CMOS logic Power-Performance-Area trade-off at the 3nm node and beyond.
Bio :
Julien Frougier joined IBM Research in 2019 and is currently a Senior Technology & Development Engineer focused on Front-End-Of-Line (FEOL) Process Integration at the AI Hardware Center in Albany, NY. His primary research is centered on the development of the Gate-All-Around (GAA) Nanosheet technology for low-power and high performance logic applications.
Dr. Frougier received his M.S. in Material Science & Engineering from the National Institute of Applied Sciences in Toulouse, France (2011) and his M.S. in Nanophysics from the Paul Sabatier University, Toulouse, France (2011). He received his Ph.D. in Condensed Matter Physics from the Unite Mixte de Physique CNRS/Thales, Palaiseau, France (2014). His doctoral research focused on the control of light polarization using spin-injected optoelectronic devices and was conducted in close collaboration with the Optical Signal Processing group of Thales Research & Technology. He then completed his Post-Doctoral fellowship at The Pennsylvania State University centered on the design, fabrication and characterization of sub-thermionic transistor devices for low-power applications (2016). In 2016, he joined GLOBALFOUNDRIES to focus on the research and development of advanced Gate-All-Around transistor architectures for low-power and high performance logic applications as part of the IBM Alliance.
Dr. Frougier has co-authored 30+ peer reviewed papers and holds 100+ issued patents. He is currently appointed as IBM Master Inventor and received multiple IBM Outstanding Innovation Awards including the "World’s First 2 Nanometer Chip Technology".
