• R. Aeschlimann, D. Preziosi, P. Scheiderer, M. Sing, S. Valencia, J. Santamaria, C. Luo, H. Ryll, F. Radu, R. Claessen, C. Piamonteze, M. Bibes, A Living‐Dead Magnetic Layer at the Surface of Ferrimagnetic DyTiO3 Thin Films. Advanced Materials. 30, 1707489 (2018).

  • M. Alouini, J. Frougier, A. Joly, G. Baili, D. Dolfi, J. - M. George, VSPIN: a new model relying on the vectorial description of the laser field for predicting the polarization dynamics of spin-injected V(e)CSELs. Optics Express. 26, 6739-6757 (2018).
    Abstract: A new vectorial model (VSPIN) based on the Jones formalism is proposed to describe the polarization dynamics of spin injected V(e)CSELs. This general modelling framework accounts for spin injection effects as a gain circular dichroism in the active medium and provides guidelines for developing functional spin-controlled lasers. We investigate the detrimental role of phase anisotropy on polarization switching and show that it can be overcome by preparing the laser cavity to achieve efficient polarization switching under low effective spin injection. The VSPIN model predictions have been confirmed experimentally and explain the polarization behavior of spin-VCSELs reported in the literature.

  • F. Cadiz, A. Djeffal, D. Lagarde, A. Balocchi, B. Tao, B. Xu, S. Liang, M. Stoffel, X. Devaux, H. Jaffrès, J. - M. George, M. Hehn, S. Mangin, H. Carrere, X. Marie, T. Amand, X. Han, Z. Wang, B. Urbaszek, Y. Lu, P. Renucci, Electrical Initialization of Electron and Nuclear Spins in a Single Quantum Dot at Zero Magnetic Field. Nano Letters. 18, 2381 (2018).
    Abstract: Electrical Initialization of Electron and Nuclear Spins in a Single Quantum Dot at Zero Magnetic Field
    Tags: Semiconductors and Spintronics.

  • S. - J. Carreira, M. - H. Aguirre, J. Briatico, E. Weschke, L. - B. Steren, Tuning the interfacial charge, orbital, and spin polarization properties in La0.67Sr0.33MnO3/La1−xSrxMnO3 bilayers. Applied Physics Letters. 112, 032401 (2018).
    Abstract: The possibility of controlling the interfacial properties of artificial oxide heterostructures is still attracting researchers in the field of materials engineering. Here, we used surface sensitive techniques and high-resolution transmission electron microscopy to investigate the evolution of the surface spin-polarization and lattice strains across the interfaces between La0.66Sr0.33MnO3 thin films and low-doped manganites as capping layers. We have been able to fine tune the interfacial spin-polarization by changing the capping layer thickness and composition. The spin-polarization was found to be the highest at a critical capping thickness that depends on the Sr doping. We explain the non-trivial magnetic profile by the combined effect of two mechanisms: On the one hand, the extra carriers supplied by the low-doped manganites that tend to compensate the overdoped interface, favouring locally a ferromagnetic double-exchange coupling. On the other hand, the evolution from a tensile-strained structure of t...

  • J. - Y. Chauleau, W. Legrand, N. Reyren, D. Maccariello, S. Collin, H. Popescu, K. Bouzehouane, V. Cros, N. Jaouen, A. Fert, Chirality in Magnetic Multilayers Probed by the Symmetry and the Amplitude of Dichroism in X-Ray Resonant Magnetic Scattering. Phys. Rev. Lett. 120, 037202 (2018).
    Abstract: Chirality in condensed matter has recently become a topic of the utmost importance because of its significant role in the understanding and mastering of a large variety of new fundamental physical mechanisms. Versatile experimental approaches, capable to reveal easily the exact winding of order parameters, are therefore essential. Here we report x-ray resonant magnetic scattering as a straightforward tool to reveal directly the properties of chiral magnetic systems. We show that it can straightforwardly and unambiguously determine the main characteristics of chiral magnetic distributions: i.e., its chiral nature, the quantitative winding sense (clockwise or counterclockwise), and its type, i.e., N\textbackslash'eel [cycloidal] or Bloch [helical]. This method is model independent, does not require a priori knowledge of the magnetic parameters, and can be applied to any system with magnetic domains ranging from a few nanometers (wavelength limited) to several microns. By using prototypical multilayers with tailored magnetic chiralities driven by spin-orbit-related effects at $\textbackslashmathrm{Co}\textbar\textbackslashmathrm{Pt}$ interfaces, we illustrate the strength of this method.
    Tags: Spinorbitronics.

  • P. Chen, M. - N. Grisolia, H. J. Zhao, O. E. González-Vázquez, L. Bellaiche, M. Bibes, B. - G. Liu, J. Íñiguez, Energetics of oxygen-octahedra rotations in perovskite oxides from first principles. Physical Review B. 97, 024113 (2018).
    Abstract: From superconductivity to magnetoelectricity, perovskite oxides exhibit a wealth of appealing physical properties, often controlled by subtle structural details. Especially critical are the `tilt' distortion modes involving rotations of the oxygen octahedra that constitute the backbone of the perovskite lattice, which motivates today's interest in better understanding and tuning such tilts. Here, the authors present a thorough first-principles investigation of the energy landscape relevant to this matter, revealing the main competitors among different tilt modes as well as their trends across the perovskite family.

  • T. Fördös, K. Postava, H. Jaffrès, D. Q. To, J. Pištora, H. - J. Drouhin, Mueller matrix ellipsometric study of multilayer spin-VCSEL structures with local optical anisotropy. Applied Physics Letters. 112, 221106 (2018).
    Abstract: Spin-laser structures such as spin-polarized vertical-cavity surface-emitting lasers are semiconductor devices in which the radiative recombination processes involving spin-polarized carriers result in an emission of circularly polarized photons. Nevertheless, additional linear in-plane anisotropies in the cavity, e.g., interfacial and surface anisotropies, generally lead to preferential linearly polarized laser emission and to possible coupling between modes. We present Mueller matrix ellipsometric study of non-intentionally doped InGaAs/GaAsP laser structures devoted for optical pumping operations in the spectral range from 0.73 to 6.4 eV in order to disentangle surface and quantum wells contributions to the linear optical birefringence of the structures. The measurement of full 4 × 4 Mueller matrix for multiple angles of incidence and in-plane azimuthal angles in combination with proper parametrization of optical functions has been used for extraction of optical permittivity tensor components along [11...

  • T. Huong Dang, D. Quang To, E. Erina, T. L. Hoai Nguyen, V. I. Safarov, H. Jaffrès, H. - J. Drouhin, in Journal of Magnetism and Magnetic Materials (2018)vol. 459p. 37-42.
    Abstract: We report on the investigation of carrier tunneling asymmetry at ferromagnet-semiconductor junctions. By an analytical 2 x 2 spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V semiconductors (T-d or D-2d symmetry group), the electrons may undergo a difference of transmission vs. the sign of their incident parallel wavevector normal to the in-plane magnetization. The asymmetry of transmission also exists in the valence band of semiconductors owing to the inner atomic spin-orbit strength and free of asymmetric potentials in bulk or at interfaces. We present advanced multiband 14 x 14 and 30 x 30 k.p tunneling models together with tunneling transport perturbation calculations based on Green's function techniques corroborating these results. Those demonstrate that a tunneling spin-current normal to the interface can generate a transverse surface charge current, the so-called Anomalous Tunnel Hall Effect. (C) 2017 Elsevier B.V. All rights reserved.

  • Y. Li, X. de Milly, O. Klein, V. Cros, J. Grollier, G. De Loubens, Selective control of vortex polarities by microwave field in two robustly synchronized spin-torque nano-oscillators. Applied Physics Letters. 112, 022405 (2018).
    Abstract: Manipulating operation states of coupled spin-torque nano-oscillators (STNOs), including their synchronization, is essential for applications such as complex oscillator networks. In this work, we experimentally demonstrate selective control of two coupled vortex STNOs through microwave-assisted switching of their vortex core polarities. First, the two oscillators are shown to synchronize due to the dipolar interaction in a broad frequency range tuned by an external biasing field. Coherent output is demonstrated along with strong linewidth reduction. Then, we show individual vortex polarity control of each oscillator, which leads to synchronization/desynchronization due to accompanied frequency shift. Our methods can be easily extended to multiple-element coupled oscillator networks.

  • L. Lόpez-Mir, C. Frontera, H. Aramberri, K. Bouzehouane, J. Cisneros-Fernández, B. Bozzo, L. Balcells, B. Martínez, Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element. Scientific Reports. 8, 861 (2018).
    Abstract: Multiple spin functionalities are probed on Pt/La2Co0.8Mn1.2O6/Nb:SrTiO3, a device composed by a ferromagnetic insulating barrier sandwiched between non-magnetic electrodes. Uniquely, La2Co0.8Mn1.2O6 thin films present strong perpendicular magnetic anisotropy of magnetocrystalline origin, property of major interest for spintronics. The junction has an estimated spin-filtering efficiency of 99.7% and tunneling anisotropic magnetoresistance (TAMR) values up to 30% at low temperatures. This remarkable angular dependence of the magnetoresistance is associated with the magnetic anisotropy whose origin lies in the large spin-orbit interaction of Co2+ which is additionally tuned by the strain of the crystal lattice. Furthermore, we found that the junction can operate as an electrically readable magnetic memory device. The findings of this work demonstrate that a single ferromagnetic insulating barrier with strong magnetocrystalline anisotropy is sufficient for realizing sensor and memory functionalities in a tunneling device based on TAMR.

  • D. Maccariello, W. Legrand, N. Reyren, K. Garcia, K. Bouzehouane, S. Collin, V. Cros, A. Fert, Electrical detection of single magnetic skyrmions in metallic multilayers at room temperature. Nature Nanotechnology. 13, 233 (2018).
    Abstract: <p>Single magnetic skyrmions are electrically detected in magnetic multilayers at room temperature, and their main contribution to the signal, which is enhanced for tracks approaching the size of the skyrmions, comes from the anomalous—rather than topological—Hall effect.</p>
    Tags: Spinorbitronics.

  • S. McVitie, S. Hughes, K. Fallon, S. McFadzean, D. McGrouther, M. Krajnak, W. Legrand, D. Maccariello, S. Collin, K. Garcia, N. Reyren, V. Cros, A. Fert, K. Zeissler, C. H. Marrows, A transmission electron microscope study of Néel skyrmion magnetic textures in multilayer thin film systems with large interfacial chiral interaction. Scientific Reports. 8, 5703 (2018).
    Abstract: Skyrmions in ultrathin ferromagnetic metal (FM)/heavy metal (HM) multilayer systems produced by conventional sputtering methods have recently generated huge interest due to their applications in the field of spintronics. The sandwich structure with two correctly-chosen heavy metal layers provides an additive interfacial exchange interaction which promotes domain wall or skyrmion spin textures that are Néel in character and with a fixed chirality. Lorentz transmission electron microscopy (TEM) is a high resolution method ideally suited to quantitatively image such chiral magnetic configurations. When allied with physical and chemical TEM analysis of both planar and cross-sectional samples, key length scales such as grain size and the chiral variation of the magnetisation variation have been identified and measured. We present data showing the importance of the grain size (mostly < 10 nm) measured from direct imaging and its potential role in describing observed behaviour of isolated skyrmions (diameter < 100 nm). In the latter the region in which the magnetization rotates is measured to be around 30 nm. Such quantitative information on the multiscale magnetisation variations in the system is key to understanding and exploiting the behaviour of skyrmions for future applications in information storage and logic devices.

  • A. Mizrahi, T. Hirtzlin, A. Fukushima, H. Kubota, S. Yuasa, J. Grollier, D. Querlioz, Neural-like computing with populations of superparamagnetic basis functions. Nature Communications. 9, 1533 (2018).
    Abstract: Population coding, where populations of artificial neurons process information collectively can facilitate robust data processing, but require high circuit overheads. Here, the authors realize this approach with reduced circuit area and power consumption, by utilizing superparamagnetic tunnel junction based neurons.

  • A. M. R. Monteiro, A. D. Caviglia, N. Reyren, in Spectroscopy of Complex Oxide Interfaces (Springer., 2018; //www.springer.com/us/book/9783319749884)Springer Series in Materials Sciencep. .

  • K. Nakazawa, M. Bibes, H. Kohno, Topological Hall Effect from Strong to Weak Coupling. Journal of the Physical Society of Japan. 87, 033705 (2018).
    Abstract: The topological Hall effect (THE) of electrons coupled to a noncoplanar spin texture has been studied so far for the strong- and weak-coupling regimes separately; the former in terms of the Berry phase and the latter by perturbation theory. In this letter, we present a unified treatment in terms of spin gauge field by considering not only the adiabatic (Berry phase) component of the gauge field but also the nonadiabatic component. While only the adiabatic contribution is important in the strong-coupling regime, it is completely canceled by a part of the nonadiabatic contribution in the weak-coupling regime, where the THE is governed by the remaining nonadiabatic terms. We found a new weak-coupling region that cannot be accessed by a simple perturbation theory, where the Hall conductivity is proportional to M, with 2M being the exchange splitting of the electron spectrum.

  • D. Perconte, F. A. Cuellar, C. Moreau-Luchaire, M. Piquemal-Banci, R. Galceran, P. - R. Kidambi, M. - B. Martin, S. Hofmann, R. Bernard, B. Dlubak, P. Seneor, J. - E. Villegas, Tunable Klein-like tunnelling of high-temperature superconducting pairs into graphene. Nature Physics. 14, 25 (2018).
    Abstract: \textlessp\textgreaterProximity effects enable superconductivity to leak into normal metals. In graphene, a Klein-like tunnelling of superconducting pairs from a high-temperature superconductor allows the proximity effects to be tuned by electric fields.\textless/p\textgreater

  • D. Pinna, F. A. Araujo, J. - V. Kim, V. Cros, D. Querlioz, P. Bessiere, J. Droulez, J. Grollier, Skyrmion Gas Manipulation for Probabilistic Computing. Physical Review Applied. 9, 064018 (2018).
    Abstract: Stochastic computing (SC), a radical rethinking of computation, defines operations on streams of random bits; it trades precision for large advantages in speed. Implementation has been thwarted, though, by the lack of an efficient means to properly decorrelate bitstreams at each logic gate in an SC circuit. This study harnesses recent advances in manipulating magnetic skyrmions to propose a technique for telegraph-signal reshuffling that is tailor-made for SC applications. Leveraging the two-dimensional diffusive character of skyrmion motion shows how useful these exotic magnetic textures can be in tackling problems that require compact, scalable, energy-efficient device architectures.

  • M. Piquemal-Banci, R. Galceran, F. Godel, S. Caneva, M. - B. Martin, R. - S. Weatherup, P. - R. Kidambi, K. Bouzehouane, S. Xavier, A. Anane, F. Petroff, A. Fert, S. M. M. Dubois, J. - C. Charlier, J. Robertson, S. Hofmann, B. Dlubak, P. Seneor, Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitride. ACS Nano. 12, 4712 (2018).
    Abstract: Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitride

  • D. Preziosi, L. Lopez-Mir, X. Li, T. Cornelissen, J. - H. Lee, F. Trier, K. Bouzehouane, S. Valencia, A. Gloter, A. Barthélémy, M. Bibes, Direct Mapping of Phase Separation across the Metal–Insulator Transition of NdNiO3. Nano Letters. 18, 2226 (2018).
    Abstract: Direct Mapping of Phase Separation across the Metal–Insulator Transition of NdNiO3

  • D. Sando, C. Carrétéro, M. - N. Grisolia, A. Barthélémy, V. Nagarajan, M. Bibes, Revisiting the Optical Band Gap in Epitaxial BiFeO3 Thin Films. Advanced Optical Materials. 6, 201700836 (2018).

  • G. Singh, A. Jouan, L. Benfatto, F. Couëdo, P. Kumar, A. Dogra, R. C. Budhani, S. Caprara, M. Grilli, E. Lesne, A. Barthélémy, M. Bibes, C. Feuillet-Palma, J. Lesueur, N. Bergeal, Competition between electron pairing and phase coherence in superconducting interfaces. Nature Communications. 9, 407 (2018).
    Abstract: <p>The nature of the doping dependent superconducting transition remains elusive for a two dimensional electron gas at the LaAlO<sub>3</sub>/SrTiO<sub>3</sub> interface. Here, Singh et al. report superfluid stiffness and the superconducting gap energy at such interface as a function of carrier density.</p>

  • B. Tao, P. Barate, X. Devaux, P. Renucci, J. Frougier, A. Djeffal, S. Liang, B. Xu, M. Hehn, H. Jaffrès, J. - M. George, X. Marie, S. Mangin, X. Han, Z. Wang, Y. Lu, Atomic-scale understanding of high thermal stability of the Mo/CoFeB/MgO spin injector for spin-injection in remanence. Nanoscale. 10, 10213-10220 (2018).
    Abstract: Remanent spin injection into a spin light emitting diode (spin-LED) at zero magnetic field is a prerequisite for future application of spin optoelectronics. Here, we demonstrate the remanent spin injection into GaAs based LEDs with a thermally stable Mo/CoFeB/MgO spin injector. A systematic study of magnetic properties, polarization-resolved electroluminescence (EL) and atomic-scale interfacial structures has been performed in comparison with the Ta/CoFeB/MgO spin injector. The perpendicular magnetic anisotropy (PMA) of the Mo/CoFeB/MgO injector shows more advanced thermal stability than that of the Ta/CoFeB/MgO injector and robust PMA can be maintained up to 400 °C annealing. The remanent circular polarization (PC) of EL from the Mo capped spin-LED reaches a maximum value of 10% after 300 °C annealing, and even remains at 4% after 400 °C annealing. In contrast, the Ta capped spin-LED almost completely loses the remanent PC under 400 °C annealing. Combined advanced electron microscopy and spectroscopy studies reveal that a large amount of Ta diffuses into the MgO tunneling barrier through the CoFeB layer after 400 °C annealing. However, the diffusion of Mo into CoFeB is limited and never reaches the MgO barrier. These findings afford a comprehensive perspective to use the highly thermally stable Mo/CoFeB/MgO spin injector for efficient electrical spin injection in remanence.

  • N. Thiery, A. Draveny, V. V. Naletov, L. Vila, J. - P. Attané, C. Beigné, G. de Loubens, M. Viret, N. Beaulieu, J. B. Youssef, V. E. Demidov, S. O. Demokritov, A. N. Slavin, V. S. Tiberkevich, A. Anane, P. Bortolotti, V. Cros, O. Klein, Nonlinear spin conductance of yttrium iron garnet thin films driven by large spin-orbit torque. Physical Review B. 97, 060409 (2018).
    Abstract: We report high power spin transfer studies in open magnetic geometries by measuring the spin conductance between two nearby Pt wires deposited on top of an epitaxial yttrium iron garnet thin film. Spin transport is provided by propagating spin waves that are generated and detected by direct and inverse spin Hall effects. We observe a crossover in spin conductance from a linear transport dominated by exchange magnons (low current regime) to a nonlinear transport dominated by magnetostatic magnons (high current regime). The latter are low-damping magnetic excitations, located near the spectral bottom of the magnon manifold, with a sensitivity to the applied magnetic field. This picture is supported by microfocus Brillouin light-scattering spectroscopy. Our findings could be used for the development of controllable spin conductors by variation of relatively weak magnetic fields.

  • N. Thiery, V. V. Naletov, L. Vila, A. Marty, A. Brenac, J. - F. Jacquot, G. de Loubens, M. Viret, A. Anane, V. Cros, J. B. Youssef, N. Beaulieu, V. E. Demidov, B. Divinskiy, S. O. Demokritov, O. Klein, Electrical properties of epitaxial yttrium iron garnet ultrathin films at high temperatures. Physical Review B. 97, 064422 (2018).
    Abstract: We report a study on the electrical properties of 19-nm-thick yttrium iron garnet (YIG) films grown by liquid phase epitaxy on gadolinium gallium garnet single crystal. The electrical conductivity and Hall coefficient are measured in the high-temperature range [300,400] K using a Van der Pauw four-point probe technique. We find that the electrical resistivity decreases exponentially with increasing temperature following an activated behavior corresponding to a band gap of ${E}_{g}\ensuremath{\approx}2$ eV. It drops to values about $5\ifmmode\times\else\texttimes\fi{}{10}^{3}\phantom{\rule{4pt}{0ex}}\mathrm{\ensuremath{\Omega}}\phantom{\rule{0.16em}{0ex}}\text{cm}$ at $T=400$ K, thus indicating that epitaxial YIG ultrathin films behave as large gap semiconductors. We also infer the Hall mobility, which is found to be positive ($p$ type) at 5 ${\mathrm{cm}}^{2}\phantom{\rule{0.16em}{0ex}}{\mathrm{V}}^{\ensuremath{-}1}\phantom{\rule{0.16em}{0ex}}{\mathrm{sec}}^{\ensuremath{-}1}$ and almost independent of temperature. We discuss the consequence for nonlocal spin transport experiments performed on YIG at room temperature and demonstrate the existence of electrical offset voltages to be disentangled from pure spin effects.

  • J. Varignon, L. Vila, A. Barthélémy, M. Bibes, A new spin for oxide interfaces. Nature Physics. 14, 322 (2018).
    Abstract: The variety of emergent phenomena occurring at oxide interfaces has made these systems the focus of intense study in recent years. We argue that spin–orbit effects in oxide interfaces provide a versatile handle to generate, control and convert spin currents, with a view towards low-power spintronics.

  • D. - C. Vaz, E. Lesne, A. Sander, H. Naganuma, E. Jacquet, J. Santamaria, A. Barthélémy, M. Bibes, Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures. JoVE (Journal of Visualized Experiments), e56951-e56951 (2018).
    Abstract: We fabricate metal/LaAlO3/SrTiO3 heterostructures using a combination of pulsed laser deposition and in...

  • D. Vodenicarevic, N. Locatelli, A. Mizrahi, T. Hirtzlin, J. S. Friedman, J. Grollier, D. Querlioz, in 2018 IEEE International Symposium on Circuits and Systems (ISCAS) (IEEE, 2018; https://ieeexplore.ieee.org/document/8351771/)p. 1-4.

  • M. Wang, W. Cai, K. Cao, J. Zhou, J. Wrona, S. Peng, H. Yang, J. Wei, W. Kang, Y. Zhang, J. Langer, B. Ocker, A. Fert, W. Zhao, Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance. Nature Communications. 9, 671 (2018).
    Abstract: <p>Perpendicular magnetic tunnel junctions with large tunnel magnetoresistance and low junction resistance are promising for the magnetic random access memories. Here the authors achieve the spin-transfer-torque switching in perpendicular magnetic tunnel junctions with 249% tunnel magnetoresistance and low resistance-area product.</p>

  • H. Yang, G. Chen, A. A. C. Cotta, A. T. N’Diaye, S. A. Nikolaev, E. A. Soares, W. A. A. Macedo, K. Liu, A. K. Schmid, A. Fert, M. Chshiev, Significant Dzyaloshinskii–Moriya interaction at graphene–ferromagnet interfaces due to the Rashba effect. Nature Materials. 17, 605 (2018).
    Abstract: Authors investigate graphene/cobalt and graphene/nickel interfaces, and observe a non-zero Dzyaloshinskii–Moriya interaction that they attribute to the Rashba effect; calculations suggest the effect can be enhanced in van der Waals heterostructures.


  • F. Abreu Araujo, L. Piraux, Spin-Transfer-Torque Driven Vortex Dynamics in Electrodeposited Nanowire Spin-Valves. SPIN. 07, 1740007 (2017).

  • A. Agbelele, D. Sando, C. Toulouse, C. Paillard, R. - D. Johnson, R. Rüffer, A. - F. Popkov, C. Carrétéro, P. Rovillain, J. - M. Le Breton, B. Dkhil, M. Cazayous, Y. Gallais, M. - A. Méasson, A. Sacuto, P. Manuel, A. - K. Zvezdin, A. Barthélémy, J. Juraszek, M. Bibes, Strain and Magnetic Field Induced Spin‐Structure Transitions in Multiferroic BiFeO3. Advanced Materials. 29, 1602327 (2017).
    Abstract: The magnetic‐field‐dependent spin ordering of strained BiFeO3 films is determined using nuclear resonant scattering and Raman spectroscopy. The critical field required to destroy the cycloidal modulation...

  • P. Barate, S. - H. Liang, T. T. Zhang, J. Frougier, B. Xu, P. Schieffer, M. Vidal, H. Jaffrès, B. Lépine, S. Tricot, F. Cadiz, T. Garandel, J. - M. George, T. Amand, X. Devaux, M. Hehn, S. Mangin, B. Tao, X. F. Han, Z. - G. Wang, X. Marie, Y. Lu, P. Renucci, Bias Dependence of the Electrical Spin Injection into GaAs from Co-Fe-B/MgO Injectors with Different MgO Growth Processes. Phys. Rev. Applied. 8, 054027 (2017).
    Abstract: In view of future spintronic and spin-optronic devices, such as spin light-emitting diodes and spin lasers, it is important to understand the dependence of electrical spin injection on bias in bipolar devices based on GaAs. Focusing on the efficiency of Co-Fe-B/MgO spin injectors, the authors investigate the influence of the MgO growth process on this bias dependence, using MgO tunnel barriers fabricated by different techniques. The bias dependence of spin injection efficiency, and the compromise between high intensity and high circular polarization of electroluminescence, depend strongly on the characteristics of the interface, which can be engineered by the growth process.
    Tags: Semiconductors and Spintronics.

  • S. Boyn, J. Grollier, G. Lecerf, B. Xu, N. Locatelli, S. Fusil, S. Girod, C. Carrétéro, K. Garcia, S. Xavier, J. Tomas, L. Bellaiche, M. Bibes, A. Barthélémy, S. Saïghi, V. Garcia, Learning through ferroelectric domain dynamics in solid-state synapses. Nature Communications. 8, 14736 (2017).
    Abstract: Accurate modelling of memristor dynamics is essential for the development of autonomous learning in artificial neural networks. Through a combined theoretical and experimental study of the polarization switching process in ferroelectric memristors, Boynet al.

  • L. Bégon-Lours, V. Rouco, A. Sander, J. Trastoy, R. Bernard, E. Jacquet, K. Bouzehouane, S. Fusil, V. Garcia, A. Barthélémy, M. Bibes, J. Santamaría, J. - E. Villegas, High-Temperature-Superconducting Weak Link Defined by the Ferroelectric Field Effect. Phys. Rev. Applied. 7, 064015 (2017).
    Abstract: Josephson junctions are the cornerstones of numerous applications, and fabricating them from high-temperature superconductors has received much attention in recent years. The authors exploit the local field-effect doping of a cuprate superconducting film by a ferroelectric overlayer, where domain structure is “written” at will using an atomic force microscope. The key advantage of this approach is that it creates devices that are planar and can be reconfigured by “rewriting” the ferroelectric.

  • N. - B. Caballero, I. - F. Aguirre, L. - J. Albornoz, A. - B. Kolton, J. - C. Rojas-Sanchez, S. Collin, J. - M. George, R. - D. Pardo, V. Jeudy, S. Bustingorry, J. Curiale, Excess velocity of magnetic domain walls close to the depinning field. Phys. Rev. B. 96, 224422 (2017).
    Abstract: Magnetic field driven domain wall velocities in [Co/Ni] based multilayers thin films have been measured using polar magneto-optic Kerr effect microscopy. The low field results are shown to be consistent with the universal creep regime of domain wall motion, characterized by a stretched exponential growth of the velocity with the inverse of the applied field. Approaching the depinning field from below results in an unexpected excess velocity with respect to the creep law. We analyze these results using scaling theory to show that this speeding up of domain wall motion can be interpreted as due to the increase of the size of the deterministic relaxation close to the depinning transition. We propose a phenomenological model to accurately fit the observed excess velocity and to obtain characteristic values for the depinning field ${H}_{d}$, the depinning temperature ${T}_{d}$, and the characteristic velocity scale ${v}_{0}$ for each sample.

  • M. Cabero, K. Nagy, F. Gallego, A. Sander, M. Rio, F. A. Cuellar, J. Tornos, D. Hernandez-Martin, N. M. Nemes, F. Mompean, M. Garcia-Hernandez, A. Rivera-Calzada, Z. Sefrioui, N. Reyren, T. Feher, M. Varela, C. Leon, J. Santamaria, Modified magnetic anisotropy at LaCoO3/La0.7Sr0.3MnO3 interfaces. APL Materials. 5, 096104 (2017).
    Abstract: Controlling magnetic anisotropy is an important objective towards engineering novel magnetic device concepts in oxide electronics. In thin film manganites, magnetic anisotropy is weak and it is primarily determined by the substrate, through induced structural distortions resulting from epitaxial mismatch strain. On the other hand, in cobaltites, with a stronger spin orbit interaction, magnetic anisotropy is typically much stronger. In this paper, we show that interfacing La0.7Sr0.3MnO3 (LSMO) with an ultrathin LaCoO3 (LCO) layer drastically modifies the magnetic anisotropy of the manganite, making it independent of the substrate and closer to the magnetic isotropy characterizing its rhombohedral structure. Ferromagnetic resonance measurements evidence a tendency of manganite magnetic moments to point out-of-plane suggesting non collinear magnetic interactions at the interface. These results may be of interest for the design of oxide interfaces with tailored magnetic structures for new oxide devices.

  • F. Cadiz, D. Lagarde, S. H. Liang, B. Tao, J. Frougier, Y. Lu, B. Xu, H. Jaffrès, Z. Wang, X. Han, M. Hehn, S. Mangin, J. - M. George, H. Carrere, T. Amand, X. Marie, B. Urbaszek, P. Renucci, in Spintronics X (International Society for Optics and Photonics, 2017; https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10357/103571D/Very-efficient-electrical-spin-injection--detection-into-quantum-dots/10.1117/12.2273746.short)vol. 10357p. 103571D.
    Abstract: In this paper, we demonstrate a very efficient electrical spin injection into an ensemble of InAs/InGaAs quantum dots at zero magnetic field. The circular polarization of the electroluminescence coming from the dots, which are embedded into a GaAs-based Spin Light Emitting diode reaches a value as large as 20% at low temperature. In this device, no external magnetic field is required in order to inject or read spin polarization thanks to the use of an ultrathin CoFeB electrode (1.1 nm), as well as p-doped quantum dots (with one hole per dot in average) as an optical probe. The electroluminescence circular polarization of the dots follows the hysteresis loop of the magnetic layer and decreases as a function of bias for large voltages. In a reverse way, we have also investigated the possibility to use such a device as a photodetector presenting a photon helicity-dependent photocurrent. We observe a weak asymmetry of photocurrent under right and left polarized light that follows the hysteresis cycle of the magnetic layer, and the effect decreases for increasing temperatures and can be controlled by the bias.

  • S. Cervera, M. Trassinelli, M. Marangolo, C. Carrétéro, V. Garcia, S. Hidki, E. Jacquet, E. Lamour, A. Lévy, S. Macé, C. Prigent, J. - P. Rozet, S. Steydli, D. Vernhet, Modulating the phase transition temperature of giant magnetocaloric thin films by ion irradiation. Phys. Rev. Materials. 1, 065402 (2017).
    Abstract: Magnetic refrigeration based on the magnetocaloric effect at room temperature is one of the most attractive alternatives to the current gas compression/expansion method routinely employed. Nevertheless, in giant magnetocaloric materials, optimal refrigeration is restricted to the narrow temperature window of the phase transition (${T}_{c}$). In this work, we present the possibility of varying this transition temperature in the same giant magnetocaloric material by ion irradiation. We demonstrate that the transition temperature of iron rhodium thin films can be tuned by the bombardment of ions of ${\textbackslashmathrm{Ne}}ˆ{5+}$ with varying fluences up to ${10}ˆ{14}$ ions ${\textbackslashmathrm{cm}}ˆ{\textbackslashensuremath{-}2}$, leading to optimal refrigeration over a large 270\textbackslashchar21{}380 K temperature window. The ${T}_{c}$ modification is found to be due to the ion-induced disorder and to the density of new pointlike defects. The variation of the phase transition temperature with the number of incident ions opens new perspectives in the conception of devices using giant magnetocaloric materials.

  • J. - Y. Chauleau, E. Haltz, C. Carrétéro, S. Fusil, M. Viret, Multi-stimuli manipulation of antiferromagnetic domains assessed by second-harmonic imaging. Nature Materials. 16, 803–807 (2017).
    Abstract: Sub-coercive electric fields and sub-picosecond light pulses are shown to enable low-power manipulation of antiferromagnetic domains in the multiferroic BiFeO3.

  • M. Collet, O. Gladii, M. Evelt, V. Bessonov, L. Soumah, P. Bortolotti, S. O. Demokritov, Y. Henry, V. Cros, M. Bailleul, V. E. Demidov, A. Anane, Spin-wave propagation in ultra-thin YIG based waveguides. Applied Physics Letters. 110, 092408 (2017).
    Abstract: Spin-wave propagation in microfabricated 20 nm thick, 2.5 μm wide Yttrium Iron Garnet (YIG) waveguides is studied using propagating spin-wave spectroscopy (PSWS) and phase resolved micro-focused Brillouin Light Scattering (μ-BLS) spectroscopy. We demonstrate that spin-wave propagation in 50 parallel waveguides is robust against microfabrication induced imperfections and extract spin-wave propagation parameters for the Damon-Eshbach configuration in a wide range of excitation frequencies. As expected from its low damping, YIG allows for the propagation of spin waves over long distances; the attenuation lengths is 25 μm at μ 0 H = 45 mT. Moreover, direct mapping of spin waves by μ-BLS allows us to reconstruct the spin-wave dispersion relation and to confirm the multi-mode propagation in the waveguides, glimpsed by propagating spin-wave spectroscopy.
    Tags: Magnonics.

  • M. Collet, R. Mattana, J. - B. Moussy, K. Ollefs, S. Collin, C. Deranlot, A. Anane, V. Cros, F. Petroff, F. Wilhelm, A. Rogalev, Investigating magnetic proximity effects at ferrite/Pt interfaces. Applied Physics Letters. 111, 202401 (2017).
    Abstract: Spintronic devices based on pure spin currents have drawn a lot of attention during the last few years for low energy device design. One approach to generate pure spin currents is to combine a metallic or insulating ferromagnetic layer with a non-magnetic metallic layer with a large spin-orbit coupling. A recent controversy has arisen in the possible role of magnetic proximity effects at ferromagnetic/non-magnetic interfaces, which can hamper the understanding of pure spin current generation mechanisms. While magnetic proximity effects have been frequently observed at ferromagnetic metal/non-magnetic interfaces, there are only a few studies on ferromagnetic insulator/non-magnetic interfaces. Regarding the use of ferromagnetic insulators, the focus has been mainly on yttrium iron garnet (YIG). However, investigation of induced magnetic moments at YIG/Pt interfaces has engendered contradictory results. Here, we propose to study insulating ferrites for which electronic and magnetic properties can be modulate...

  • M. Collet, L. Soumah, P. Bortolotti, M. Munoz, V. Cros, A. Anane, in AIP Advances (2017)vol. 7p. 055924.
    Abstract: We have investigated the spin Seebeck effect (SSE) generated by current induced-heating in ultra-thin yttrium iron garnet film (20 nm) covered by an 8 nm thick Pt layer. By passing current in the Pt layer, an out-of-plane temperature gradient is established that, in turn, generates an out-of-equilibrium magnons population. The resulting pure spin current is detected using the inverse spin Hall effect (ISHE) measured in the Pt electrode. A lock-in detection scheme is used to separate the SSE signal from other magneto-galvanic effect. Indeed, the SSE signal is obtained as the second harmonic voltage response, while spin Hall magnetoresistance (SMR) is measured as the first harmonic response to the ac excitation current. Interestingly, the amplitude of the SSE in such thin YIG film is comparable to what has been reported for much thicker films.
    Tags: Magnonics.

  • O. Copie, J. Varignon, H. Rotella, G. Steciuk, P. Boullay, A. Pautrat, A. David, B. Mercey, P. Ghosez, W. Prellier, Chemical Strain Engineering of Magnetism in Oxide Thin Films. Advanced Materials. 29 (2017), doi:10.1002/adma.201604112.

  • A. Cornia, P. Seneor, Spintronics: The molecular way. Nature Materials. 16, 505–506 (2017).
    Abstract: Molecular spintronics is an interdisciplinary field at the interface between organic spintronics, molecular magnetism, molecular electronics and quantum computing, which is advancing fast and promises large technological payoffs.

  • V. E. Demidov, S. Urazhdin, G. de Loubens, O. Klein, V. Cros, A. Anane, S. O. Demokritov, Magnetization oscillations and waves driven by pure spin currents. Physics Reports. 673, 1–31 (2017).

  • S. Deng, H. Butt, K. Jiang, B. Dlubak, P. - R. Kidambi, P. Seneor, S. Xavier, A. - K. Yetisen, Graphene nanoribbon based plasmonic Fresnel zone plate lenses. RSC Adv. 7, 16594–16601 (2017).
    Abstract: A graphene-based metamaterial lens is theoretically proposed by combining plasmonic nanoribbons with Fresnel Zone Plate (FZP) architecture to realize wavelength-selective and tunable lensing. The plasmonic FZP lens shows higher focal intensity and efficiency compared to conventional FZP. As compared with normal graphene FZP, the lensing effect of the plasmonic FZP can be enhanced by 83 times. When compared with Au thin film based FZP lenses, the graphene plasmonic lenses can achieve comparable lensing effects, but with a thinner geometry and with an additional advantage of being wavelength selective and tuneable. The analyses of selectivity and tunability of the plasmonic lens show that the plasmonic lens functions as a filter with broadband incident light or as a switch which can be turned on and off via changing the Fermi levels. The diffraction between neighboring graphene nanoribbons and the effect of the substrate on the lensing effect is also discussed. The plasmonic effect of the nanoribbons only contributes to the focal intensity without affecting the diffraction properties of Fresnel zone plate lenses such as focal lengths. This plasmonic FZP lens is an ideal combination of near and far field optics. However, the complex interaction of diffractions within and between the FZP rings could lead to a significant change of the lensing effect, which opens the possibility of creating innovative graphene metamaterial devices. The findings in this work can be used for developing wavelength-selective electro-optical applications operating in the infrared and terahertz ranges.

  • O. d’Allivy Kelly, M. Collet, E. Jacquet, R. Mattana, F. Petroff, P. Bortolotti, V. Cros, A. Anane, F. Wilhelm, K. Ollefs, A. Rogalev, Magnetic Proximity Effect Free Spin Hall Magnetoresistance in YIG/Pd. SPIN. 07, 1740005 (2017).

  • A. Fert, N. Reyren, V. Cros, Magnetic skyrmions: advances in physics and potential applications. Nature Reviews Materials. 2, 17031 (2017).
    Abstract: Magnetic skyrmions are topologically protected spin whirls that hold promise for applications because they can be controllably moved, created and annihilated. In this Review, the underlying physics of the stabilization of skyrmions at room temperature and their prospectives

  • T. Fördös, H. Jaffrès, K. Postava, M. - S. Seghilani, A. Garnache, J. Pištora, H. - J. Drouhin, Eigenmodes of spin vertical-cavity surface-emitting lasers with local linear birefringence and gain dichroism. Phys. Rev. A. 96, 043828 (2017).
    Abstract: We present a general method for the modeling of semiconductor lasers such as a vertical-cavity surface-emitting laser and a vertical-external-cavity surface-emitting laser containing multiple quantum wells and involving anisotropies that may reveal (i) a local linear birefringence due to the strain field at the surface or (ii) a birefringence in quantum wells due to phase amplitude coupling originating from the reduction of the biaxial ${D}_{2d}$ symmetry group to the ${C}_{2v}$ symmetry group at the III-V ternary semiconductor interfaces. From a numerical point of view, a scattering S-matrix recursive method is implemented using a gain or amplification tensor derived analytically from the Maxwell-Bloch equations. It enables one to model the properties of the emission (threshold, polarization, and mode splitting) from the laser with multiple quantum well active zones by searching for the resonant eigenmodes of the cavity. The method is demonstrated on real laser structures and is presently used for the extraction of optical permittivity tensors of surface strain and quantum wells in agreement with experiments. The method can be generalized to find the laser eigenmodes in the most general case of circular polarized pumps (unbalance between the spin-up and spin-down channels) and/or dichroism allowing an elliptically polarized light emission as recently demonstrated experimentally when the linear birefringence is almost compensated [Joly et al., Opt. Lett. 42, 651 (2017)].
    Tags: Semiconductors and Spintronics.

  • R. Galceran, E. Gaufres, A. Loiseau, M. Piquemal-Banci, F. Godel, A. Vecchiola, O. Bezencenet, M. - B. Martin, B. Servet, F. Petroff, B. Dlubak, P. Seneor, Stabilizing ultra-thin black phosphorus with in-situ-grown 1 nm-Al2O3 barrier. Applied Physics Letters. 111, 243101 (2017).
    Abstract: Exfoliated black phosphorus is a 2D semiconductor with promising properties for electronics, spintronics, and optoelectronics. Nevertheless, its rapid degradation in air renders its integration and use in devices particularly challenging—even more so for smaller thicknesses for which the degradation rate is tremendously enhanced. In order to effectively protect the thinnest flakes, we present here an approach based on an in-situ dielectric capping to avoid all contact with air. Optical microscopy, Raman spectroscopy, and atomic force microscopy studies confirm that 1 nm of Al2O3 efficiently passivates exfoliated black phosphorus (below 5 layers) on Si/SiO2 substrates. Such an ultrathin and transparent passivation layer can act as a tunnel barrier allowing for black phosphorus devices processing without passivation layer removal.

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