• R. Aeschlimann, D. Preziosi, P. Scheiderer, M. Sing, S. Valencia, J. Santamaria, C. Luo, H. Ryll, F. Radu, R. Claessen, C. Piamonteze, M. Bibes, A Living‐Dead Magnetic Layer at the Surface of Ferrimagnetic DyTiO3 Thin Films. Advanced Materials. 30, 1707489 (2018).

  • M. Alouini, J. Frougier, A. Joly, G. Baili, D. Dolfi, J. - M. George, VSPIN: a new model relying on the vectorial description of the laser field for predicting the polarization dynamics of spin-injected V(e)CSELs. Optics Express. 26, 6739-6757 (2018).
    Résumé : A new vectorial model (VSPIN) based on the Jones formalism is proposed to describe the polarization dynamics of spin injected V(e)CSELs. This general modelling framework accounts for spin injection effects as a gain circular dichroism in the active medium and provides guidelines for developing functional spin-controlled lasers. We investigate the detrimental role of phase anisotropy on polarization switching and show that it can be overcome by preparing the laser cavity to achieve efficient polarization switching under low effective spin injection. The VSPIN model predictions have been confirmed experimentally and explain the polarization behavior of spin-VCSELs reported in the literature.

  • L. Bégon-Lours, V. Rouco, Q. Qiao, A. Sander, M. A. Roldán, R. Bernard, J. Trastoy, A. Crassous, E. Jacquet, K. Bouzehouane, M. Bibes, J. Santamaría, A. Barthélémy, M. Varela, J. - E. Villegas, Factors limiting ferroelectric field-effect doping in complex oxide heterostructures. Physical Review Materials. 2, 084405 (2018).
    Résumé : Ferroelectric field-effect doping has emerged as a powerful approach to manipulate the ground state of correlated oxides, opening the door to a different class of field-effect devices. However, this potential is not fully exploited so far, since the size of the field-effect doping is generally much smaller than expected. Here we study the limiting factors through magnetotransport and scanning transmission electron and piezoresponse force microscopy in ferroelectric/superconductor $(\mathrm{YB}{\mathrm{a}}_{2}\mathrm{C}{\mathrm{u}}_{3}{\mathrm{O}}_{7\text{\ensuremath{-}}\ensuremath{\delta}}/\mathrm{BiFe}{\mathrm{O}}_{3})$ heterostructures, a model system showing very strong field effects. Still, we find that they are limited in the first place by an incomplete ferroelectric switching. This can be explained by the existence of a preferential polarization direction set by the atomic terminations at the interface. More importantly, we also find that the field-effect carrier doping is accompanied by a strong modulation of the carrier mobility. Besides making quantification of field effects via Hall measurements not straightforward, this finding suggests that ferroelectric poling produces structural changes (e.g., charged defects or structural distortions) in the correlated oxide channel. Those findings have important consequences for the understanding of ferroelectric field effects and for the strategies to further enhance them.

  • F. Cadiz, A. Djeffal, D. Lagarde, A. Balocchi, B. Tao, B. Xu, S. Liang, M. Stoffel, X. Devaux, H. Jaffrès, J. - M. George, M. Hehn, S. Mangin, H. Carrere, X. Marie, T. Amand, X. Han, Z. Wang, B. Urbaszek, Y. Lu, P. Renucci, Electrical Initialization of Electron and Nuclear Spins in a Single Quantum Dot at Zero Magnetic Field. Nano Letters. 18, 2381 (2018).
    Résumé : Electrical Initialization of Electron and Nuclear Spins in a Single Quantum Dot at Zero Magnetic Field
    Mots-clés : Semiconductors and Spintronics.

  • S. - J. Carreira, M. - H. Aguirre, J. Briatico, E. Weschke, L. - B. Steren, Tuning the interfacial charge, orbital, and spin polarization properties in La0.67Sr0.33MnO3/La1−xSrxMnO3 bilayers. Applied Physics Letters. 112, 032401 (2018).
    Résumé : The possibility of controlling the interfacial properties of artificial oxide heterostructures is still attracting researchers in the field of materials engineering. Here, we used surface sensitive techniques and high-resolution transmission electron microscopy to investigate the evolution of the surface spin-polarization and lattice strains across the interfaces between La0.66Sr0.33MnO3 thin films and low-doped manganites as capping layers. We have been able to fine tune the interfacial spin-polarization by changing the capping layer thickness and composition. The spin-polarization was found to be the highest at a critical capping thickness that depends on the Sr doping. We explain the non-trivial magnetic profile by the combined effect of two mechanisms: On the one hand, the extra carriers supplied by the low-doped manganites that tend to compensate the overdoped interface, favouring locally a ferromagnetic double-exchange coupling. On the other hand, the evolution from a tensile-strained structure of t...

  • J. - Y. Chauleau, W. Legrand, N. Reyren, D. Maccariello, S. Collin, H. Popescu, K. Bouzehouane, V. Cros, N. Jaouen, A. Fert, Chirality in Magnetic Multilayers Probed by the Symmetry and the Amplitude of Dichroism in X-Ray Resonant Magnetic Scattering. Phys. Rev. Lett. 120, 037202 (2018).
    Résumé : Chirality in condensed matter has recently become a topic of the utmost importance because of its significant role in the understanding and mastering of a large variety of new fundamental physical mechanisms. Versatile experimental approaches, capable to reveal easily the exact winding of order parameters, are therefore essential. Here we report x-ray resonant magnetic scattering as a straightforward tool to reveal directly the properties of chiral magnetic systems. We show that it can straightforwardly and unambiguously determine the main characteristics of chiral magnetic distributions: i.e., its chiral nature, the quantitative winding sense (clockwise or counterclockwise), and its type, i.e., N\textbackslash'eel [cycloidal] or Bloch [helical]. This method is model independent, does not require a priori knowledge of the magnetic parameters, and can be applied to any system with magnetic domains ranging from a few nanometers (wavelength limited) to several microns. By using prototypical multilayers with tailored magnetic chiralities driven by spin-orbit-related effects at $\textbackslashmathrm{Co}\textbar\textbackslashmathrm{Pt}$ interfaces, we illustrate the strength of this method.
    Mots-clés : Spinorbitronics.

  • P. Chen, M. - N. Grisolia, H. J. Zhao, O. E. González-Vázquez, L. Bellaiche, M. Bibes, B. - G. Liu, J. Íñiguez, Energetics of oxygen-octahedra rotations in perovskite oxides from first principles. Physical Review B. 97, 024113 (2018).
    Résumé : From superconductivity to magnetoelectricity, perovskite oxides exhibit a wealth of appealing physical properties, often controlled by subtle structural details. Especially critical are the `tilt' distortion modes involving rotations of the oxygen octahedra that constitute the backbone of the perovskite lattice, which motivates today's interest in better understanding and tuning such tilts. Here, the authors present a thorough first-principles investigation of the energy landscape relevant to this matter, revealing the main competitors among different tilt modes as well as their trends across the perovskite family.

  • D. Crete, A. Sene, A. Labbe, E. Pawlowski Recoba, J. Kermorvant, Y. Lemaitre, B. Marcilhac, E. Parzy, E. Thiaudiere, C. Ulysse, Evaluation of Josephson Junction Parameter Dispersion Effects in Arrays of HTS SQUIDs. IEEE Transactions on Applied Superconductivity. 28, 1602506 (2018).

  • S. Delprat, M. Galbiati, S. Tatay, B. Quinard, C. Barraud, F. Petroff, P. Seneor, R. Mattana, Molecular spintronics: the role of spin-dependent hybridization. Journal of Physics D: Applied Physics. 51, 473001 (2018).
    Résumé : Spin-dependent hybridization at the ferromagnet/molecule interface has recently unveiled a promising new potential for spintronics. By projecting the spintronic properties (i.e. induced spin polarization) from a given ferromagnet electrode to the highly versatile and tailorable molecular layer, spin-dependent hybridization has opened up new opportunities to tailor spintronic device properties at the molecular scale. Here we focus on the potential and impact of this hybridization on spintronic devices. Depending on the coupling strength at the ferromagnet/molecule interface, the induced spin polarization can be enhanced or even inversed. In the first part of the paper, we introduce the concept of spin-dependent hybridization and, in particular, we show that it allows the magnetoresistive response of spintronic devices to be tuned. In the second part, we review the experimental evidence emphasizing spin-dependent hybridization in molecular layers and single molecules. In the last part, we highlight how this spin-dependent hybridization can play a key role in tunnelling magnetoresistance and tunnelling anisotropic magnetoresistance.

  • A. Djeffal, F. Cadiz, M. Stoffel, D. Lagarde, X. Gao, H. Jaffrès, X. Devaux, S. Migot, X. Marie, H. Rinnert, S. Mangin, J. - M. George, P. Renucci, Y. Lu, Co-Fe-B/MgO/Ge Spin Photodiode Operating at Telecommunication Wavelength with Zero Applied Magnetic Field. Physical Review Applied. 10, 044049 (2018).
    Résumé : The spin photodiode is essential for decoding circularly polarized light for future applications in optical telecommunication. However, most spin photodiodes only work with a large applied magnetic field, because of the in-plane magnetization of the spin detector. The authors investigate the growth and spin-polarized photocurrent of a perpendicularly magnetized Co-Fe-B/MgO spin detector on germanium. Without using any magnetic field, they obtain asymmetry in photocurrent helicity that is detectable at room temperature, for 1310-nm light. This work will impact the development of devices for the optical transport of spin information.
    Mots-clés : Semiconductors and Spintronics.

  • M. Evelt, L. Soumah, A. B. Rinkevich, S. O. Demokritov, A. Anane, V. Cros, J. B. Youssef, G. de Loubens, O. Klein, P. Bortolotti, V. E. Demidov, Emission of Coherent Propagating Magnons by Insulator-Based Spin-Orbit-Torque Oscillators. Physical Review Applied. 10, 041002 (2018).
    Résumé : The emerging field of $m\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}g\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}o\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}c\phantom{\rule{0}{0ex}}s$ utilizes propagating coherent magnons (collective excitations of electron spins) as carriers of information. Scaling down magnonic devices requires finding new approaches to the efficient excitation of magnons at nanoscale. This study demonstrates an approach to excite coherent GHz-frequency magnons in magnetic insulators by means of dc electric currents. The proposed method opens a route for implementing highly efficient nanomagnonic computing systems.

  • T. Fördös, K. Postava, H. Jaffrès, D. Q. To, J. Pištora, H. - J. Drouhin, Mueller matrix ellipsometric study of multilayer spin-VCSEL structures with local optical anisotropy. Applied Physics Letters. 112, 221106 (2018).
    Résumé : Spin-laser structures such as spin-polarized vertical-cavity surface-emitting lasers are semiconductor devices in which the radiative recombination processes involving spin-polarized carriers result in an emission of circularly polarized photons. Nevertheless, additional linear in-plane anisotropies in the cavity, e.g., interfacial and surface anisotropies, generally lead to preferential linearly polarized laser emission and to possible coupling between modes. We present Mueller matrix ellipsometric study of non-intentionally doped InGaAs/GaAsP laser structures devoted for optical pumping operations in the spectral range from 0.73 to 6.4 eV in order to disentangle surface and quantum wells contributions to the linear optical birefringence of the structures. The measurement of full 4 × 4 Mueller matrix for multiple angles of incidence and in-plane azimuthal angles in combination with proper parametrization of optical functions has been used for extraction of optical permittivity tensor components along [11...

  • M. Galbiati, A. Vecchiola, S. Mañas-Valero, J. Canet-Ferrer, R. Galceran, M. Piquemal-Banci, F. Godel, A. Forment-Aliaga, B. Dlubak, P. Seneor, E. Coronado, A Local Study of the Transport Mechanisms in MoS2 Layers for Magnetic Tunnel Junctions. ACS Applied Materials & Interfaces. 10, 30017 (2018).
    Résumé : A Local Study of the Transport Mechanisms in MoS2 Layers for Magnetic Tunnel Junctions

  • J. Hu, B. Ernst, S. Tu, M. Kuveždić, A. Hamzić, E. Tafra, M. Basletić, Y. Zhang, A. Markou, C. Felser, A. Fert, W. Zhao, J. - P. Ansermet, H. Yu, Anomalous Hall and Nernst Effects in Co2TiSn and Co2Ti0.6V0.4Sn Heusler Thin Films. Physical Review Applied. 10, 044037 (2018).
    Résumé : The cobalt-based Heusler alloys are promising for spintronic applications, thanks to their high spin polarization and half-metallic character. This work investigates the spin-dependent transport and thermoelectric effects in epitaxial Co${}_{2}$TiSn thin films, with and without V doping. The anomalous Nernst angle and anomalous Hall angle are both determined, and the relationship between these two important parameters is discussed. These experimental results are a step toward realizing spin-caloritronic devices for efficient on-chip energy harvesting of waste heat.

  • T. Huong Dang, D. Quang To, E. Erina, T. L. Hoai Nguyen, V. I. Safarov, H. Jaffrès, H. - J. Drouhin, dans Journal of Magnetism and Magnetic Materials (2018)vol. 459p. 37-42.
    Résumé : We report on the investigation of carrier tunneling asymmetry at ferromagnet-semiconductor junctions. By an analytical 2 x 2 spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V semiconductors (T-d or D-2d symmetry group), the electrons may undergo a difference of transmission vs. the sign of their incident parallel wavevector normal to the in-plane magnetization. The asymmetry of transmission also exists in the valence band of semiconductors owing to the inner atomic spin-orbit strength and free of asymmetric potentials in bulk or at interfaces. We present advanced multiband 14 x 14 and 30 x 30 k.p tunneling models together with tunneling transport perturbation calculations based on Green's function techniques corroborating these results. Those demonstrate that a tunneling spin-current normal to the interface can generate a transverse surface charge current, the so-called Anomalous Tunnel Hall Effect. (C) 2017 Elsevier B.V. All rights reserved.

  • W. Legrand, J. - Y. Chauleau, D. Maccariello, N. Reyren, S. Collin, K. Bouzehouane, N. Jaouen, V. Cros, A. Fert, Hybrid chiral domain walls and skyrmions in magnetic multilayers. Science Advances. 4, eaat0415 (2018).
    Résumé : <p>Noncollinear spin textures in ferromagnetic ultrathin films are currently the subject of renewed interest since the discovery of the interfacial Dzyaloshinskii-Moriya interaction (DMI). This antisymmetric exchange interaction selects a given chirality for the spin textures and allows stabilizing configurations with nontrivial topology including chiral domain walls (DWs) and magnetic skyrmions. Moreover, it has many crucial consequences on the dynamical properties of these topological structures. In recent years, the study of noncollinear spin textures has been extended from single ultrathin layers to magnetic multilayers with broken inversion symmetry. This extension of the structures in the vertical dimension allows room temperature stability and very efficient current-induced motion for both Néel DWs and skyrmions. We show how, in these multilayered systems, the interlayer interactions can actually lead to hybrid chiral magnetization arrangements. The described thickness-dependent reorientation of DWs is experimentally confirmed by studying demagnetized multilayers through circular dichroism in x-ray resonant magnetic scattering. We also demonstrate a simple yet reliable method for determining the magnitude of the DMI from static domain measurements even in the presence of these hybrid chiral structures by taking into account the actual profile of the DWs. The existence of these novel hybrid chiral textures has far-reaching implications on how to stabilize and manipulate DWs, as well as skymionic structures in magnetic multilayers.</p>

  • Y. Li, X. de Milly, O. Klein, V. Cros, J. Grollier, G. De Loubens, Selective control of vortex polarities by microwave field in two robustly synchronized spin-torque nano-oscillators. Applied Physics Letters. 112, 022405 (2018).
    Résumé : Manipulating operation states of coupled spin-torque nano-oscillators (STNOs), including their synchronization, is essential for applications such as complex oscillator networks. In this work, we experimentally demonstrate selective control of two coupled vortex STNOs through microwave-assisted switching of their vortex core polarities. First, the two oscillators are shown to synchronize due to the dipolar interaction in a broad frequency range tuned by an external biasing field. Coherent output is demonstrated along with strong linewidth reduction. Then, we show individual vortex polarity control of each oscillator, which leads to synchronization/desynchronization due to accompanied frequency shift. Our methods can be easily extended to multiple-element coupled oscillator networks.

  • L. Lόpez-Mir, C. Frontera, H. Aramberri, K. Bouzehouane, J. Cisneros-Fernández, B. Bozzo, L. Balcells, B. Martínez, Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element. Scientific Reports. 8, 861 (2018).
    Résumé : Multiple spin functionalities are probed on Pt/La2Co0.8Mn1.2O6/Nb:SrTiO3, a device composed by a ferromagnetic insulating barrier sandwiched between non-magnetic electrodes. Uniquely, La2Co0.8Mn1.2O6 thin films present strong perpendicular magnetic anisotropy of magnetocrystalline origin, property of major interest for spintronics. The junction has an estimated spin-filtering efficiency of 99.7% and tunneling anisotropic magnetoresistance (TAMR) values up to 30% at low temperatures. This remarkable angular dependence of the magnetoresistance is associated with the magnetic anisotropy whose origin lies in the large spin-orbit interaction of Co2+ which is additionally tuned by the strain of the crystal lattice. Furthermore, we found that the junction can operate as an electrically readable magnetic memory device. The findings of this work demonstrate that a single ferromagnetic insulating barrier with strong magnetocrystalline anisotropy is sufficient for realizing sensor and memory functionalities in a tunneling device based on TAMR.

  • D. Maccariello, W. Legrand, N. Reyren, K. Garcia, K. Bouzehouane, S. Collin, V. Cros, A. Fert, Electrical detection of single magnetic skyrmions in metallic multilayers at room temperature. Nature Nanotechnology. 13, 233 (2018).
    Résumé : <p>Single magnetic skyrmions are electrically detected in magnetic multilayers at room temperature, and their main contribution to the signal, which is enhanced for tracks approaching the size of the skyrmions, comes from the anomalous—rather than topological—Hall effect.</p>
    Mots-clés : Spinorbitronics.

  • S. McVitie, S. Hughes, K. Fallon, S. McFadzean, D. McGrouther, M. Krajnak, W. Legrand, D. Maccariello, S. Collin, K. Garcia, N. Reyren, V. Cros, A. Fert, K. Zeissler, C. H. Marrows, A transmission electron microscope study of Néel skyrmion magnetic textures in multilayer thin film systems with large interfacial chiral interaction. Scientific Reports. 8, 5703 (2018).
    Résumé : Skyrmions in ultrathin ferromagnetic metal (FM)/heavy metal (HM) multilayer systems produced by conventional sputtering methods have recently generated huge interest due to their applications in the field of spintronics. The sandwich structure with two correctly-chosen heavy metal layers provides an additive interfacial exchange interaction which promotes domain wall or skyrmion spin textures that are Néel in character and with a fixed chirality. Lorentz transmission electron microscopy (TEM) is a high resolution method ideally suited to quantitatively image such chiral magnetic configurations. When allied with physical and chemical TEM analysis of both planar and cross-sectional samples, key length scales such as grain size and the chiral variation of the magnetisation variation have been identified and measured. We present data showing the importance of the grain size (mostly < 10 nm) measured from direct imaging and its potential role in describing observed behaviour of isolated skyrmions (diameter < 100 nm). In the latter the region in which the magnetization rotates is measured to be around 30 nm. Such quantitative information on the multiscale magnetisation variations in the system is key to understanding and exploiting the behaviour of skyrmions for future applications in information storage and logic devices.

  • A. Mizrahi, T. Hirtzlin, A. Fukushima, H. Kubota, S. Yuasa, J. Grollier, D. Querlioz, Neural-like computing with populations of superparamagnetic basis functions. Nature Communications. 9, 1533 (2018).
    Résumé : Population coding, where populations of artificial neurons process information collectively can facilitate robust data processing, but require high circuit overheads. Here, the authors realize this approach with reduced circuit area and power consumption, by utilizing superparamagnetic tunnel junction based neurons.

  • A. M. R. Monteiro, A. D. Caviglia, N. Reyren, dans Spectroscopy of Complex Oxide Interfaces (Springer., 2018; // Series in Materials Sciencep. .

  • L. D. N. Mouafo, F. Godel, G. Melinte, S. Hajjar‐Garreau, H. Majjad, B. Dlubak, O. Ersen, B. Doudin, L. Simon, P. Seneor, J. - F. Dayen, Anisotropic Magneto‐Coulomb Properties of 2D–0D Heterostructure Single Electron Device. Advanced Materials. 30 (2018), doi:10.1002/adma.201802478.

  • K. Nakazawa, M. Bibes, H. Kohno, Topological Hall Effect from Strong to Weak Coupling. Journal of the Physical Society of Japan. 87, 033705 (2018).
    Résumé : The topological Hall effect (THE) of electrons coupled to a noncoplanar spin texture has been studied so far for the strong- and weak-coupling regimes separately; the former in terms of the Berry phase and the latter by perturbation theory. In this letter, we present a unified treatment in terms of spin gauge field by considering not only the adiabatic (Berry phase) component of the gauge field but also the nonadiabatic component. While only the adiabatic contribution is important in the strong-coupling regime, it is completely canceled by a part of the nonadiabatic contribution in the weak-coupling regime, where the THE is governed by the remaining nonadiabatic terms. We found a new weak-coupling region that cannot be accessed by a simple perturbation theory, where the Hall conductivity is proportional to M, with 2M being the exchange splitting of the electron spectrum.

  • E. Pawlowski Recoba, J. Kermorvant, D. Crété, Y. Lemaître, B. Marcilhac, C. Ulysse, F. Couëdo, C. Feuillet-Palma, N. Bergeal, J. Lesueur, Static and radio frequency magnetic response of high T c superconducting quantum interference filters made by ion irradiation. Superconductor Science and Technology. 31, 095005 (2018).

  • D. Perconte, F. A. Cuellar, C. Moreau-Luchaire, M. Piquemal-Banci, R. Galceran, P. - R. Kidambi, M. - B. Martin, S. Hofmann, R. Bernard, B. Dlubak, P. Seneor, J. - E. Villegas, Tunable Klein-like tunnelling of high-temperature superconducting pairs into graphene. Nature Physics. 14, 25 (2018).
    Résumé : \textlessp\textgreaterProximity effects enable superconductivity to leak into normal metals. In graphene, a Klein-like tunnelling of superconducting pairs from a high-temperature superconductor allows the proximity effects to be tuned by electric fields.\textless/p\textgreater

  • D. Pinna, F. A. Araujo, J. - V. Kim, V. Cros, D. Querlioz, P. Bessiere, J. Droulez, J. Grollier, Skyrmion Gas Manipulation for Probabilistic Computing. Physical Review Applied. 9, 064018 (2018).
    Résumé : Stochastic computing (SC), a radical rethinking of computation, defines operations on streams of random bits; it trades precision for large advantages in speed. Implementation has been thwarted, though, by the lack of an efficient means to properly decorrelate bitstreams at each logic gate in an SC circuit. This study harnesses recent advances in manipulating magnetic skyrmions to propose a technique for telegraph-signal reshuffling that is tailor-made for SC applications. Leveraging the two-dimensional diffusive character of skyrmion motion shows how useful these exotic magnetic textures can be in tackling problems that require compact, scalable, energy-efficient device architectures.

  • M. Piquemal-Banci, R. Galceran, F. Godel, S. Caneva, M. - B. Martin, R. - S. Weatherup, P. - R. Kidambi, K. Bouzehouane, S. Xavier, A. Anane, F. Petroff, A. Fert, S. M. M. Dubois, J. - C. Charlier, J. Robertson, S. Hofmann, B. Dlubak, P. Seneor, Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitride. ACS Nano. 12, 4712 (2018).
    Résumé : Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitride

  • D. Preziosi, L. Lopez-Mir, X. Li, T. Cornelissen, J. - H. Lee, F. Trier, K. Bouzehouane, S. Valencia, A. Gloter, A. Barthélémy, M. Bibes, Direct Mapping of Phase Separation across the Metal–Insulator Transition of NdNiO3. Nano Letters. 18, 2226 (2018).
    Résumé : Direct Mapping of Phase Separation across the Metal–Insulator Transition of NdNiO3

  • M. Romera, P. Talatchian, S. Tsunegi, F. A. Araujo, V. Cros, P. Bortolotti, J. Trastoy, K. Yakushiji, A. Fukushima, H. Kubota, S. Yuasa, M. Ernoult, D. Vodenicarevic, T. Hirtzlin, N. Locatelli, D. Querlioz, J. Grollier, Vowel recognition with four coupled spin-torque nano-oscillators. Nature. 563, 230 (2018).
    Résumé : A network of four spin-torque nano-oscillators can be trained in real time to recognize spoken vowels, in a simple and scalable approach that could be exploited for large-scale neural networks.

  • D. Sando, C. Carrétéro, M. - N. Grisolia, A. Barthélémy, V. Nagarajan, M. Bibes, Revisiting the Optical Band Gap in Epitaxial BiFeO3 Thin Films. Advanced Optical Materials. 6, 201700836 (2018).

  • G. Singh, A. Jouan, L. Benfatto, F. Couëdo, P. Kumar, A. Dogra, R. C. Budhani, S. Caprara, M. Grilli, E. Lesne, A. Barthélémy, M. Bibes, C. Feuillet-Palma, J. Lesueur, N. Bergeal, Competition between electron pairing and phase coherence in superconducting interfaces. Nature Communications. 9, 407 (2018).
    Résumé : <p>The nature of the doping dependent superconducting transition remains elusive for a two dimensional electron gas at the LaAlO<sub>3</sub>/SrTiO<sub>3</sub> interface. Here, Singh et al. report superfluid stiffness and the superconducting gap energy at such interface as a function of carrier density.</p>

  • L. Soumah, N. Beaulieu, L. Qassym, C. Carrétéro, E. Jacquet, R. Lebourgeois, J. Ben Youssef, P. Bortolotti, V. Cros, A. Anane, Ultra-low damping insulating magnetic thin films get perpendicular. Nature Communications. 9, 3355 (2018).
    Résumé : A magnetic material combining both low losses and strong perpendicular magnetic anisotropy (PMA) was so far missing in the field of magnon-spintronics. The authors here report on Bismuth doped YIG nanometer thick films showing both PMA and low magnetic losses for ultra-thin PMA materials.

  • B. Tao, P. Barate, X. Devaux, P. Renucci, J. Frougier, A. Djeffal, S. Liang, B. Xu, M. Hehn, H. Jaffrès, J. - M. George, X. Marie, S. Mangin, X. Han, Z. Wang, Y. Lu, Atomic-scale understanding of high thermal stability of the Mo/CoFeB/MgO spin injector for spin-injection in remanence. Nanoscale. 10, 10213-10220 (2018).
    Résumé : Remanent spin injection into a spin light emitting diode (spin-LED) at zero magnetic field is a prerequisite for future application of spin optoelectronics. Here, we demonstrate the remanent spin injection into GaAs based LEDs with a thermally stable Mo/CoFeB/MgO spin injector. A systematic study of magnetic properties, polarization-resolved electroluminescence (EL) and atomic-scale interfacial structures has been performed in comparison with the Ta/CoFeB/MgO spin injector. The perpendicular magnetic anisotropy (PMA) of the Mo/CoFeB/MgO injector shows more advanced thermal stability than that of the Ta/CoFeB/MgO injector and robust PMA can be maintained up to 400 °C annealing. The remanent circular polarization (PC) of EL from the Mo capped spin-LED reaches a maximum value of 10% after 300 °C annealing, and even remains at 4% after 400 °C annealing. In contrast, the Ta capped spin-LED almost completely loses the remanent PC under 400 °C annealing. Combined advanced electron microscopy and spectroscopy studies reveal that a large amount of Ta diffuses into the MgO tunneling barrier through the CoFeB layer after 400 °C annealing. However, the diffusion of Mo into CoFeB is limited and never reaches the MgO barrier. These findings afford a comprehensive perspective to use the highly thermally stable Mo/CoFeB/MgO spin injector for efficient electrical spin injection in remanence.

  • N. Thiery, A. Draveny, V. V. Naletov, L. Vila, J. - P. Attané, C. Beigné, G. de Loubens, M. Viret, N. Beaulieu, J. B. Youssef, V. E. Demidov, S. O. Demokritov, A. N. Slavin, V. S. Tiberkevich, A. Anane, P. Bortolotti, V. Cros, O. Klein, Nonlinear spin conductance of yttrium iron garnet thin films driven by large spin-orbit torque. Physical Review B. 97, 060409 (2018).
    Résumé : We report high power spin transfer studies in open magnetic geometries by measuring the spin conductance between two nearby Pt wires deposited on top of an epitaxial yttrium iron garnet thin film. Spin transport is provided by propagating spin waves that are generated and detected by direct and inverse spin Hall effects. We observe a crossover in spin conductance from a linear transport dominated by exchange magnons (low current regime) to a nonlinear transport dominated by magnetostatic magnons (high current regime). The latter are low-damping magnetic excitations, located near the spectral bottom of the magnon manifold, with a sensitivity to the applied magnetic field. This picture is supported by microfocus Brillouin light-scattering spectroscopy. Our findings could be used for the development of controllable spin conductors by variation of relatively weak magnetic fields.

  • N. Thiery, V. V. Naletov, L. Vila, A. Marty, A. Brenac, J. - F. Jacquot, G. de Loubens, M. Viret, A. Anane, V. Cros, J. B. Youssef, N. Beaulieu, V. E. Demidov, B. Divinskiy, S. O. Demokritov, O. Klein, Electrical properties of epitaxial yttrium iron garnet ultrathin films at high temperatures. Physical Review B. 97, 064422 (2018).
    Résumé : We report a study on the electrical properties of 19-nm-thick yttrium iron garnet (YIG) films grown by liquid phase epitaxy on gadolinium gallium garnet single crystal. The electrical conductivity and Hall coefficient are measured in the high-temperature range [300,400] K using a Van der Pauw four-point probe technique. We find that the electrical resistivity decreases exponentially with increasing temperature following an activated behavior corresponding to a band gap of ${E}_{g}\ensuremath{\approx}2$ eV. It drops to values about $5\ifmmode\times\else\texttimes\fi{}{10}^{3}\phantom{\rule{4pt}{0ex}}\mathrm{\ensuremath{\Omega}}\phantom{\rule{0.16em}{0ex}}\text{cm}$ at $T=400$ K, thus indicating that epitaxial YIG ultrathin films behave as large gap semiconductors. We also infer the Hall mobility, which is found to be positive ($p$ type) at 5 ${\mathrm{cm}}^{2}\phantom{\rule{0.16em}{0ex}}{\mathrm{V}}^{\ensuremath{-}1}\phantom{\rule{0.16em}{0ex}}{\mathrm{sec}}^{\ensuremath{-}1}$ and almost independent of temperature. We discuss the consequence for nonlocal spin transport experiments performed on YIG at room temperature and demonstrate the existence of electrical offset voltages to be disentangled from pure spin effects.

  • S. Tsunegi, T. Taniguchi, R. Lebrun, K. Yakushiji, V. Cros, J. Grollier, A. Fukushima, S. Yuasa, H. Kubota, Scaling up electrically synchronized spin torque oscillator networks. Scientific Reports. 8, 13475 (2018).
    Résumé : Synchronized nonlinear oscillators networks are at the core of numerous families of applications including phased array wave generators and neuromorphic pattern matching systems. In these devices, stable synchronization between large numbers of nanoscale oscillators is a key issue that remains to be demonstrated. Here, we show experimentally that synchronized spin-torque oscillator networks can be scaled up. By increasing the number of synchronized oscillators up to eight, we obtain that the emitted power and the quality factor increase linearly with the number of oscillators. Even more importantly, we demonstrate that the stability of synchronization in time exceeds 1.6 milliseconds corresponding to 105 periods of oscillation. Our study demonstrates that spin-torque oscillators are suitable for applications based on synchronized networks of oscillators.

  • S. Delprat, M. Galbiati, S. Tatay, B. Quinard, C. Barraud, P. Seneor, R. Mattana, F. Petroff, dans Spin in organics, Z. V. Vardeny, Éd. (WORLD SCIENTIFIC, 2018; 1p. 63-92.

  • J. Varignon, L. Vila, A. Barthélémy, M. Bibes, A new spin for oxide interfaces. Nature Physics. 14, 322 (2018).
    Résumé : The variety of emergent phenomena occurring at oxide interfaces has made these systems the focus of intense study in recent years. We argue that spin–orbit effects in oxide interfaces provide a versatile handle to generate, control and convert spin currents, with a view towards low-power spintronics.

  • D. - C. Vaz, A. Barthélémy, M. Bibes, Oxide spin-orbitronics: New routes towards low-power electrical control of magnetization in oxide heterostructures. Japanese Journal of Applied Physics. 57, 0902A4 (2018).

  • D. - C. Vaz, E. Lesne, A. Sander, H. Naganuma, E. Jacquet, J. Santamaria, A. Barthélémy, M. Bibes, Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures. JoVE (Journal of Visualized Experiments), e56951-e56951 (2018).
    Résumé : We fabricate metal/LaAlO3/SrTiO3 heterostructures using a combination of pulsed laser deposition and in...

  • D. Vodenicarevic, N. Locatelli, J. Grollier, D. Querlioz, Nano-oscillator-based classification with a machine learning-compatible architecture. Journal of Applied Physics. 124, 152117 (2018).
    Résumé : Pattern classification architectures leveraging the physics of coupled nano-oscillators have been demonstrated as promising alternative computing approaches but lack effective learning algorithms. In this work, we propose a nano-oscillator based classification architecture where the natural frequencies of the oscillators are learned linear combinations of the inputs and define an offline learning algorithm based on gradient back-propagation. Our results show significant classification improvements over a related approach with online learning. We also compare our architecture with a standard neural network on a simple machine learning case, which suggests that our approach is economical in terms of the number of adjustable parameters. The introduced architecture is also compatible with existing nano-technologies: the architecture does not require changes in the coupling between nano-oscillators, and it is tolerant to oscillator phase noise.

  • D. Vodenicarevic, N. Locatelli, A. Mizrahi, T. Hirtzlin, J. S. Friedman, J. Grollier, D. Querlioz, dans 2018 IEEE International Symposium on Circuits and Systems (ISCAS) (IEEE, 2018; 1-4.

  • M. Wang, W. Cai, K. Cao, J. Zhou, J. Wrona, S. Peng, H. Yang, J. Wei, W. Kang, Y. Zhang, J. Langer, B. Ocker, A. Fert, W. Zhao, Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance. Nature Communications. 9, 671 (2018).
    Résumé : <p>Perpendicular magnetic tunnel junctions with large tunnel magnetoresistance and low junction resistance are promising for the magnetic random access memories. Here the authors achieve the spin-transfer-torque switching in perpendicular magnetic tunnel junctions with 249% tunnel magnetoresistance and low resistance-area product.</p>

  • H. Yang, O. Boulle, V. Cros, A. Fert, M. Chshiev, Controlling Dzyaloshinskii-Moriya Interaction via Chirality Dependent Atomic-Layer Stacking, Insulator Capping and Electric Field. Scientific Reports. 8, 12356 (2018).
    Résumé : Using first-principles calculations, we demonstrate several approaches to control Dzyaloshinskii-Moriya Interaction (DMI) in ultrathin films with perpendicular magnetic anisotropy. First, we find that DMI is significantly enhanced when the ferromagnetic (FM) layer is sandwiched between nonmagnetic (NM) layers inducing additive DMI in NM1/FM/NM2 structures. For instance, when two NM layers are chosen to induce DMI of opposite chirality in Co, e.g. NM1 representing Au, Ir, Al or Pb, and NM2 being Pt, the resulting DMI in NM1/Co/Pt trilayers is enhanced compared to Co/Pt bilayers. Moreover, DMI can be significantly enhanced further in case of using FM layer comprising Fe and Co layers. Namely, it is found that the DMI in Ir/Fe/Co/Pt structure can be enhanced by 80% compared to that of Co/Pt bilayers reaching a very large DMI amplitude of 5.59 meV/atom. Our second approach for enhancing DMI is to use oxide capping layer. We show that DMI is enhanced by 60% in Oxide/Co/Pt structures compared to Co/Pt bilayers. Moreover, we unveiled the DMI mechanism at Oxide/Co interface due to Rashba effect, which is different to Fert-Levy DMI at FM/NM interfaces. Finally, we demonstrate that DMI amplitude can be modulated using an electric field with an efficiency factor comparable to that of the electric field control of perpendicular magnetic anisotropy in transition metal/oxide interfaces. These approaches of DMI controlling pave the way for skyrmion and domain wall motion-based spintronic applications.

  • H. Yang, G. Chen, A. A. C. Cotta, A. T. N’Diaye, S. A. Nikolaev, E. A. Soares, W. A. A. Macedo, K. Liu, A. K. Schmid, A. Fert, M. Chshiev, Significant Dzyaloshinskii–Moriya interaction at graphene–ferromagnet interfaces due to the Rashba effect. Nature Materials. 17, 605 (2018).
    Résumé : Authors investigate graphene/cobalt and graphene/nickel interfaces, and observe a non-zero Dzyaloshinskii–Moriya interaction that they attribute to the Rashba effect; calculations suggest the effect can be enhanced in van der Waals heterostructures.

  • J. Zang, V. Cros, A. Hoffmann, Éd., dans Topology in Magnetism, J. Zang, V. Cros, A. Hoffmann, Éd. (Springer International Publishing, Cham, 2018; 192 of Springer Series in Solid-State Sciencesp. .


  • F. Abreu Araujo, L. Piraux, Spin-Transfer-Torque Driven Vortex Dynamics in Electrodeposited Nanowire Spin-Valves. SPIN. 07, 1740007 (2017).

  • A. Agbelele, D. Sando, C. Toulouse, C. Paillard, R. - D. Johnson, R. Rüffer, A. - F. Popkov, C. Carrétéro, P. Rovillain, J. - M. Le Breton, B. Dkhil, M. Cazayous, Y. Gallais, M. - A. Méasson, A. Sacuto, P. Manuel, A. - K. Zvezdin, A. Barthélémy, J. Juraszek, M. Bibes, Strain and Magnetic Field Induced Spin‐Structure Transitions in Multiferroic BiFeO3. Advanced Materials. 29, 1602327 (2017).
    Résumé : The magnetic‐field‐dependent spin ordering of strained BiFeO3 films is determined using nuclear resonant scattering and Raman spectroscopy. The critical field required to destroy the cycloidal modulation...

  • P. Barate, S. - H. Liang, T. T. Zhang, J. Frougier, B. Xu, P. Schieffer, M. Vidal, H. Jaffrès, B. Lépine, S. Tricot, F. Cadiz, T. Garandel, J. - M. George, T. Amand, X. Devaux, M. Hehn, S. Mangin, B. Tao, X. F. Han, Z. - G. Wang, X. Marie, Y. Lu, P. Renucci, Bias Dependence of the Electrical Spin Injection into GaAs from Co-Fe-B/MgO Injectors with Different MgO Growth Processes. Phys. Rev. Applied. 8, 054027 (2017).
    Résumé : In view of future spintronic and spin-optronic devices, such as spin light-emitting diodes and spin lasers, it is important to understand the dependence of electrical spin injection on bias in bipolar devices based on GaAs. Focusing on the efficiency of Co-Fe-B/MgO spin injectors, the authors investigate the influence of the MgO growth process on this bias dependence, using MgO tunnel barriers fabricated by different techniques. The bias dependence of spin injection efficiency, and the compromise between high intensity and high circular polarization of electroluminescence, depend strongly on the characteristics of the interface, which can be engineered by the growth process.
    Mots-clés : Semiconductors and Spintronics.

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