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Tunnel electroresistance through organic ferroelectrics

In collaboration with Shanghai Institute of Technical Physics and Ecole Centrale Paris, researchers from the lab showed that organic materials can be used for tunnel barriers in memory devices as a cheaper and eco-friendly replacement of their inorganic counterparts. In this paper, Tian et al. use poly(vinylidene fluoride) with 1-2 layer thickness to achieve giant tunnel electroresistance of 1,000% at room temperature. These results should stimulate further work combining organic spintronics with organic ferroelectrics and will open a new route for low cost, silicon-compatible or potentially rollable organic devices.

B. B. Tian et al. Nature Communications. 7, 11502 (2016)