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Spintronics and semiconductors

This research line concerns i) the study of spin properties in all-solid state devices based on Si and Ge and ii) the study of spin-light conversion in III-V based semiconductor heterostructures.

Selected articles


  • F. Cadiz, A. Djeffal, D. Lagarde, A. Balocchi, B. Tao, B. Xu, S. Liang, M. Stoffel, X. Devaux, H. Jaffrès, J. - M. George, M. Hehn, S. Mangin, H. Carrere, X. Marie, T. Amand, X. Han, Z. Wang, B. Urbaszek, Y. Lu, P. Renucci, Electrical Initialization of Electron and Nuclear Spins in a Single Quantum Dot at Zero Magnetic Field. Nano Letters. 18, 2381 (2018).

  • A. Djeffal, F. Cadiz, M. Stoffel, D. Lagarde, X. Gao, H. Jaffrès, X. Devaux, S. Migot, X. Marie, H. Rinnert, S. Mangin, J. - M. George, P. Renucci, Y. Lu, Co-Fe-B/MgO/Ge Spin Photodiode Operating at Telecommunication Wavelength with Zero Applied Magnetic Field. Physical Review Applied. 10, 044049 (2018).

  • T. Fördös, H. Jaffrès, K. Postava, M. - S. Seghilani, A. Garnache, J. Pištora, H. - J. Drouhin, Eigenmodes of spin vertical-cavity surface-emitting lasers with local linear birefringence and gain dichroism. Phys. Rev. A. 96, 043828 (2017).

  • S. Liang, H. Yang, P. Renucci, B. Tao, P. Laczkowski, S. Mc-Murtry, G. Wang, X. Marie, J. - M. George, S. Petit-Watelot, A. Djeffal, S. Mangin, H. Jaffrès, Y. Lu, Electrical spin injection and detection in molybdenum disulfide multilayer channel. Nature Communications. 8, 14947 (2017).

  • F. Rortais, C. Vergnaud, A. Marty, L. Vila, J. - P. Attane, J. Widiez, C. Zucchetti, F. Bottegoni, H. Jaffrès, J. - M. George, M. Jamet, Non-local electrical spin injection and detection in germanium at room temperature. Applied Physics Letters. 111, 182401 (2017).

  • P. Barate, S. - H. Liang, T. T. Zhang, J. Frougier, B. Xu, P. Schieffer, M. Vidal, H. Jaffrès, B. Lépine, S. Tricot, F. Cadiz, T. Garandel, J. - M. George, T. Amand, X. Devaux, M. Hehn, S. Mangin, B. Tao, X. F. Han, Z. - G. Wang, X. Marie, Y. Lu, P. Renucci, Bias Dependence of the Electrical Spin Injection into GaAs from Co-Fe-B/MgO Injectors with Different MgO Growth Processes. Phys. Rev. Applied. 8, 054027 (2017).

  • A. Joly, J. Frougier, G. Baili, M. Alouini, J. - M. George, I. Sagnes, D. Dolfi, (International Society for Optics and Photonics, 2016)p. 97551E–97551E–10.

  • F. Rortais, C. Vergnaud, C. Ducruet, C. Beigné, A. Marty, J. - P. Attane, J. Widiez, H. Jaffrès, J. - M. George, M. Jamet, Electrical spin injection in silicon and the role of defects. Phys. Rev. B. 94, 174426 (2016).

  • F. Rortais, S. Oyarzún, F. Bottegoni, J. - C. Rojas-Sanchez, P. Laczkowski, A. Ferrari, C. Vergnaud, C. Ducruet, C. Beigné, N. Reyren, A. Marty, J. - P. Attane, L. Vila, S. Gambarelli, J. Widiez, F. Ciccacci, H. Jaffrès, J. - M. George, M. Jamet, Spin transport in p-type germanium. J. Phys.: Condens. Matter. 28, 165801 (2016).

  • B. S. Tao, P. Barate, J. Frougier, P. Renucci, B. Xu, A. Djeffal, H. Jaffrès, J. - M. George, X. Marie, S. Petit-Watelot, S. Mangin, X. F. Han, Z. G. Wang, Y. Lu, Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector. Applied Physics Letters. 108, 152404 (2016).

  • J. Frougier, G. Baili, I. Sagnes, D. Dolfi, J. - M. George, M. Alouini, Accurate measurement of the residual birefringence in VECSEL: Towards understanding of the polarization behavior under spin-polarized pumping. Optics Express. 23, 9573–9588 (2015).