Accueil > Thèmes de recherche > Spintronique

Spintronics and semiconductors

This research line concerns i) the study of spin properties in all-solid state devices based on Si and Ge and ii) the study of spin-light conversion in III-V based semiconductor heterostructures.

Selected articles


  • S. Liang, H. Yang, P. Renucci, B. Tao, P. Laczkowski, S. Mc-Murtry, G. Wang, X. Marie, J. - M. George, S. Petit-Watelot, A. Djeffal, S. Mangin, H. Jaffrès, Y. Lu, Electrical spin injection and detection in molybdenum disulfide multilayer channel. Nature Communications. 8, 14947 (2017).

  • B. S. Tao, P. Barate, J. Frougier, P. Renucci, B. Xu, A. Djeffal, H. Jaffrès, J. - M. George, X. Marie, S. Petit-Watelot, S. Mangin, X. F. Han, Z. G. Wang, Y. Lu, Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector. Applied Physics Letters. 108, 152404 (2016).

  • F. Rortais, S. Oyarzún, F. Bottegoni, J. - C. Rojas-Sanchez, P. Laczkowski, A. Ferrari, C. Vergnaud, C. Ducruet, C. Beigné, N. Reyren, A. Marty, J. - P. Attane, L. Vila, S. Gambarelli, J. Widiez, F. Ciccacci, H. Jaffrès, J. - M. George, M. Jamet, Spin transport in p-type germanium. Journal of Physics: Condensed Matter. 28, 165801 (2016).

  • F. Rortais, C. Vergnaud, C. Ducruet, C. Beigné, A. Marty, J. - P. Attane, J. Widiez, H. Jaffrès, J. - M. George, M. Jamet, Electrical spin injection in silicon and the role of defects. Physical Review B. 94, 174426 (2016).

  • A. Joly, J. Frougier, G. Baili, M. Alouini, J. - M. George, I. Sagnes, D. Dolfi, (International Society for Optics and Photonics, 2016)p. 97551E-97551E-10.

  • J. Frougier, G. Baili, I. Sagnes, D. Dolfi, J. - M. George, M. Alouini, Accurate measurement of the residual birefringence in VECSEL: Towards understanding of the polarization behavior under spin-polarized pumping. Optics Express. 23, 9573–9588 (2015).

  • S. H. Liang, T. T. Zhang, P. Barate, J. Frougier, M. Vidal, P. Renucci, B. Xu, H. Jaffrès, J. - M. George, X. Devaux, M. Hehn, X. Marie, S. Mangin, H. X. Yang, A. Hallal, M. Chshiev, T. Amand, H. F. Liu, D. P. Liu, X. F. Han, Z. G. Wang, Y. Lu, Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector. Physical Review B. 90, 085310 (2014).

  • P. Barate, S. Liang, T. T. Zhang, J. Frougier, M. Vidal, P. Renucci, X. Devaux, B. Xu, H. Jaffrès, J. - M. George, X. Marie, M. Hehn, S. Mangin, Y. Zheng, T. Amand, B. Tao, X. F. Han, Z. Wang, Y. Lu, Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods. Applied Physics Letters. 105, 012404 (2014).

  • T. Foerdoes, K. Postava, H. Jaffrès, J. Pistora, Matrix approach for modeling of emission from multilayer spin-polarized light-emitting diodes and lasers. Journal of Optics. 16, 065008 (2014).