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Spintronique et semi‐conducteurs

Cet axe de recherche concernent d’une part l’étude des propriétés de spin dans des composants solides tout‐électrique utilisant leSi et du Ge comme vecteur de l’information et d’autre part l’étude de composants dits à conversion optique, utilisant les semi‐conducteurs de type III‐V optiquement actifs.

Articles récents


  • T. Fördös, H. Jaffrès, K. Postava, M. - S. Seghilani, A. Garnache, J. Pištora, H. - J. Drouhin, Eigenmodes of spin vertical-cavity surface-emitting lasers with local linear birefringence and gain dichroism. Phys. Rev. A. 96, 043828 (2017).

  • S. Liang, H. Yang, P. Renucci, B. Tao, P. Laczkowski, S. Mc-Murtry, G. Wang, X. Marie, J. - M. George, S. Petit-Watelot, A. Djeffal, S. Mangin, H. Jaffrès, Y. Lu, Electrical spin injection and detection in molybdenum disulfide multilayer channel. Nature Communications. 8, 14947 (2017).

  • F. Rortais, C. Vergnaud, A. Marty, L. Vila, J. - P. Attane, J. Widiez, C. Zucchetti, F. Bottegoni, H. Jaffrès, J. - M. George, M. Jamet, Non-local electrical spin injection and detection in germanium at room temperature. Applied Physics Letters. 111, 182401 (2017).

  • P. Barate, S. - H. Liang, T. T. Zhang, J. Frougier, B. Xu, P. Schieffer, M. Vidal, H. Jaffrès, B. Lépine, S. Tricot, F. Cadiz, T. Garandel, J. - M. George, T. Amand, X. Devaux, M. Hehn, S. Mangin, B. Tao, X. F. Han, Z. - G. Wang, X. Marie, Y. Lu, P. Renucci, Bias Dependence of the Electrical Spin Injection into GaAs from Co-Fe-B/MgO Injectors with Different MgO Growth Processes. Phys. Rev. Applied. 8, 054027 (2017).

  • A. Joly, J. Frougier, G. Baili, M. Alouini, J. - M. George, I. Sagnes, D. Dolfi, (International Society for Optics and Photonics, 2016)p. 97551E–97551E–10.

  • F. Rortais, C. Vergnaud, C. Ducruet, C. Beigné, A. Marty, J. - P. Attane, J. Widiez, H. Jaffrès, J. - M. George, M. Jamet, Electrical spin injection in silicon and the role of defects. Phys. Rev. B. 94, 174426 (2016).

  • F. Rortais, S. Oyarzún, F. Bottegoni, J. - C. Rojas-Sanchez, P. Laczkowski, A. Ferrari, C. Vergnaud, C. Ducruet, C. Beigné, N. Reyren, A. Marty, J. - P. Attane, L. Vila, S. Gambarelli, J. Widiez, F. Ciccacci, H. Jaffrès, J. - M. George, M. Jamet, Spin transport in p-type germanium. J. Phys.: Condens. Matter. 28, 165801 (2016).

  • B. S. Tao, P. Barate, J. Frougier, P. Renucci, B. Xu, A. Djeffal, H. Jaffrès, J. - M. George, X. Marie, S. Petit-Watelot, S. Mangin, X. F. Han, Z. G. Wang, Y. Lu, Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector. Applied Physics Letters. 108, 152404 (2016).

  • J. Frougier, G. Baili, I. Sagnes, D. Dolfi, J. - M. George, M. Alouini, Accurate measurement of the residual birefringence in VECSEL: Towards understanding of the polarization behavior under spin-polarized pumping. Optics Express. 23, 9573–9588 (2015).