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Spintronique et semi‐conducteurs

Cet axe de recherche concernent d’une part l’étude des propriétés de spin dans des composants solides tout‐électrique utilisant leSi et du Ge comme vecteur de l’information et d’autre part l’étude de composants dits à conversion optique, utilisant les semi‐conducteurs de type III‐V optiquement actifs.

Articles récents


  • T. Fördös, H. Jaffrès, K. Postava, M. - S. Seghilani, A. Garnache, J. Pištora, H. - J. Drouhin, Eigenmodes of spin vertical-cavity surface-emitting lasers with local linear birefringence and gain dichroism. Physical Review A. 96, 043828 (2017).

  • F. Rortais, C. Vergnaud, A. Marty, L. Vila, J. - P. Attane, J. Widiez, C. Zucchetti, F. Bottegoni, H. Jaffrès, J. - M. George, M. Jamet, Non-local electrical spin injection and detection in germanium at room temperature. Applied Physics Letters. 111, 182401 (2017).

  • P. Barate, S. - H. Liang, T. T. Zhang, J. Frougier, B. Xu, P. Schieffer, M. Vidal, H. Jaffrès, B. Lépine, S. Tricot, F. Cadiz, T. Garandel, J. - M. George, T. Amand, X. Devaux, M. Hehn, S. Mangin, B. Tao, X. F. Han, Z. - G. Wang, X. Marie, Y. Lu, P. Renucci, Bias Dependence of the Electrical Spin Injection into GaAs from Co-Fe-B/MgO Injectors with Different MgO Growth Processes. Physical Review Applied. 8, 054027 (2017).

  • S. Liang, H. Yang, P. Renucci, B. Tao, P. Laczkowski, S. Mc-Murtry, G. Wang, X. Marie, J. - M. George, S. Petit-Watelot, A. Djeffal, S. Mangin, H. Jaffrès, Y. Lu, Electrical spin injection and detection in molybdenum disulfide multilayer channel. Nature Communications. 8, 14947 (2017).

  • B. S. Tao, P. Barate, J. Frougier, P. Renucci, B. Xu, A. Djeffal, H. Jaffrès, J. - M. George, X. Marie, S. Petit-Watelot, S. Mangin, X. F. Han, Z. G. Wang, Y. Lu, Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector. Applied Physics Letters. 108, 152404 (2016).

  • F. Rortais, S. Oyarzún, F. Bottegoni, J. - C. Rojas-Sanchez, P. Laczkowski, A. Ferrari, C. Vergnaud, C. Ducruet, C. Beigné, N. Reyren, A. Marty, J. - P. Attane, L. Vila, S. Gambarelli, J. Widiez, F. Ciccacci, H. Jaffrès, J. - M. George, M. Jamet, Spin transport in p-type germanium. Journal of Physics: Condensed Matter. 28, 165801 (2016).

  • F. Rortais, C. Vergnaud, C. Ducruet, C. Beigné, A. Marty, J. - P. Attane, J. Widiez, H. Jaffrès, J. - M. George, M. Jamet, Electrical spin injection in silicon and the role of defects. Physical Review B. 94, 174426 (2016).

  • A. Joly, J. Frougier, G. Baili, M. Alouini, J. - M. George, I. Sagnes, D. Dolfi, (International Society for Optics and Photonics, 2016)p. 97551E-97551E-10.

  • J. Frougier, G. Baili, I. Sagnes, D. Dolfi, J. - M. George, M. Alouini, Accurate measurement of the residual birefringence in VECSEL: Towards understanding of the polarization behavior under spin-polarized pumping. Optics Express. 23, 9573–9588 (2015).

  • S. H. Liang, T. T. Zhang, P. Barate, J. Frougier, M. Vidal, P. Renucci, B. Xu, H. Jaffrès, J. - M. George, X. Devaux, M. Hehn, X. Marie, S. Mangin, H. X. Yang, A. Hallal, M. Chshiev, T. Amand, H. F. Liu, D. P. Liu, X. F. Han, Z. G. Wang, Y. Lu, Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector. Physical Review B. 90, 085310 (2014).

  • P. Barate, S. Liang, T. T. Zhang, J. Frougier, M. Vidal, P. Renucci, X. Devaux, B. Xu, H. Jaffrès, J. - M. George, X. Marie, M. Hehn, S. Mangin, Y. Zheng, T. Amand, B. Tao, X. F. Han, Z. Wang, Y. Lu, Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods. Applied Physics Letters. 105, 012404 (2014).

  • T. Foerdoes, K. Postava, H. Jaffrès, J. Pistora, Matrix approach for modeling of emission from multilayer spin-polarized light-emitting diodes and lasers. Journal of Optics. 16, 065008 (2014).