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Gate-controlled spin injection at the LaAlO3/SrTiO3 interface

The electrical Hanle (Voight geometry) and Inverse Hanle (Faraday geometry) effect in a three-point geometry have been used to probe the electrical spin injection, at low temperature, at the direct LaAlO3/SrTiO3 (LAO/STO) interface from a ferromagnetic Co reservoir. The significant drop of the electrical voltage (or resistance) obtained, its very high amplification compared to the classical theory of spin injection/relaxation and the corresponding variation of the electrical spin signal upon back-gate action emphasize a preferential resonant spin injection mechanism into localized states strongly coupled to the electronic two-dimensional electron system (2-DES) in STO. A detailed analysis of our data shows that spin can be conserved from the localized states to the 2-DES by tunnelling transfer evidencing, for the first time, an efficient electrical spin injection into an oxide 2-DES.
N. Reyren et al, Phys. Rev. Lett. 108, 186802 (2012)